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Improved derivative superposition scheme for simultaneous second- and third-order distortion cancellation in LNAs

机译:LNA中同时消除二阶和三阶失真的改进导数叠加方案

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摘要

An improved derivative superposition (IDS) scheme is examined for low-noise amplifier (LNA) linearisation, which utilises PMOS as an auxiliary FET in weak inversion for simultaneous second- and third-order distortion cancellation in wideband LNAs. The performance of a LNA with IDS is compared to that of a LNA with conventional derivative superposition (CDS) and common-source (CS) cascode LNA with the same power consumption. Simulation results show that the proposed LNA has nearly the same IIP_3 as the LNA by CDS linearisation and 7 dB improvement compared to the CS LNA. Further, it has more than 20 dB improvement in IIP_2. While the gain and noise figure of the proposed LNA are nearly unaffected, it only needs 0.2% extra power.
机译:针对低噪声放大器(LNA)线性化,研究了一种改进的导数叠加(IDS)方案,该方案利用PMOS作为弱反转中的辅助FET来同时消除宽带LNA中的二阶和三阶失真。将具有IDS的LNA的性能与具有相同功耗的具有常规导数叠加(CDS)和共源(CS)共源共栅LNA的LNA的性能进行比较。仿真结果表明,与CS LNA相比,通过CDS线性化,所提出的LNA与LNA具有几乎相同的IIP_3,并且提高了7 dB。此外,它在IIP_2中的改进超过20 dB。虽然所提议的LNA的增益和噪声系数几乎不受影响,但它仅需要0.2%的额外功率。

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  • 来源
    《Electronicsletters》 |2009年第25期|1323-1325|共3页
  • 作者

    M. Parvizi; A. Nabavi;

  • 作者单位

    Microelectronics Lab., Faculty of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran;

    Microelectronics Lab., Faculty of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran;

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