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Low-dropout voltage reference: an approach to low-temperature-sensitivity architectures with high drive capability

机译:低压差电压基准:一种具有高驱动能力的低温敏感架构的方法

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摘要

A modified circuit topology for voltage references capable of providing very high load current with low-temperature-sensitivity output voltage is presented. Employing a proportional-to-absolute-temperature current source and a complementary-to-absolute-temperature voltage source in a novel closed-loop configuration, the output voltage can be tuned over a wide range of voltages lower or higher than the silicon bandgap voltage. These features make the configuration a promising competitor for low-dropout regulators. A possible implementation of the proposed topology in 0.18 μm technology shows that the simulated 0.9 and 1.3 V voltage references have fast and stable operation for load currents up to 100 mA. The temperature coefficient for both design cases is smaller than 37 ppm/℃.
机译:提出了一种用于电压基准的改进的电路拓扑,该拓扑能够提供非常高的负载电流以及低温敏感度输出电压。在新颖的闭环配置中采用比例至绝对温度电流源和互补至绝对温度电压源,可以在低于或高于硅带隙电压的宽范围电压上调节输出电压。这些功能使该配置成为低压差稳压器的有希望的竞争对手。在0.18μm技术中可能的拟议拓扑结构实现方案显示,仿真的0.9 V和1.3 V电压基准可在高达100 mA的负载电流下快速稳定地工作。两种设计案例的温度系数均小于37 ppm /℃。

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  • 来源
    《Electronicsletters》 |2009年第24期|1200-1201|共2页
  • 作者单位

    Department of Electrical Engineering., Ferdowsi University of Mashhad, Mashhad, Iran Also with Khorasan Research Institute for Food and Technology;

    Department of Electrical Engineering., Ferdowsi University of Mashhad, Mashhad, Iran;

    Department of Electrical Engineering., Ferdowsi University of Mashhad, Mashhad, Iran;

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