Relationship between thermal and luminance distributions in high-power lateral GaN/lnGaN light-emitting diodes

摘要

The relationship between the thermal and luminance distributions in high-power lateral GaN/lnGaN light-emitting diodes (LEDs) is demonstrated. By using a three-dimensional electrical circuit model and experimentally measured thermal and luminance images of the LED chips, it is shown that thermal and luminance distributions have close correlation and that uniform current density is essential to improve the thermal and luminance properties of LED chips.