Capacitive proximity sensor with negative capacitance generation technique

摘要

An oscillator-based capacitive proximity sensor is presented. To improve the sensor's sensitivity by minimising the effect of parasitic capacitance, the proposed sensor employs a negative capacitance generation technique. The sensor is implemented with a standard 0.18 ;C;m CMOS technology, and the measurement results show that frequency variation is about 1.4% at 5 cm distance while only consuming an 85 ;C;A current. The die area occupies 520 by 280 ;C;m, and the size of an external sensing plate is 0.5 by 0.5 cm.