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首页> 外文期刊>Electronics Letters >Prediction of power handling in tunable, high-Q, substrate-integrated, evanescent-mode cavity bandpass filters
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Prediction of power handling in tunable, high-Q, substrate-integrated, evanescent-mode cavity bandpass filters

机译:在可调谐,高Q,衬底集成、,逝模式腔带通滤波器中的功率处理预测

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摘要

A circuit-electromagnetic (EM) co-design approach to predict the power handling of tunable, high-Q, substrate-integrated waveguide (SIW) bandpass filters is presented. The prediction approach is directly applied to a heavily-loaded evanescent-mode cavity filter in bandpass domain. To demonstrate the validity of the design method for structures with severe aspect ratios, a 4% second-order Butterworth, evanescent-mode cavity SIW bandpass filter, with a continuous tuning range from 3.0 to 3.6 GHz is designed, fabricated, and tested. The filter handles 26.9 W of continuous-wave power at 3.0 GHz as predicted.
机译:提出了一种电路电磁(EM)协同设计方法,以预测可调谐,高Q,衬底集成波导(SIW)带通滤波器的功率处理。该预测方法直接应用于带通域中的重载渐逝模式空腔滤波器。为了证明该设计方法对具有高深宽比的结构的有效性,设计,制造和测试了4%二阶Butterworth瞬态模腔SIW带通滤波器,其连续调谐范围为3.0至3.6 GHz。如预期的那样,该滤波器可处理3.0 GHz时26.9 W的连续波功率。

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