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Enabling PZT bimorph actuator with passive polysilicon structure

机译:使用无源多晶硅结构实现PZT双压电晶片执行器

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摘要

For the first time, a bimorph thin film lead zirconate titanate (PZT) micro-actuator with thick polysilicon as a passive structural layer is reported. A simple micro-cantilever actuator consisting of 1000 μm long and 250 μm wide with 4 μm thick polysilicon structure flanked by a piezoelectric active layer on the top and bottom side has been fabricated to demonstrate such novel bimorph configuration. The actuator displays a flat profile with only 2 μm of tip deflection which indicates a balanced stress distribution in the structure. It is driven alternatively in both directions, demonstrating its unique suitability for micro-actuation mechanisms where a passive structural layer is required to enhance the mechanical performance and reliability of the system. The static and dynamic measurements show similar characteristics for the top and bottom actuation. The actuator has a measured resonance frequency of 6.3 kHz, and displacement voltage sensitivities of 17.9 and 25.6 nm/V in the upward and downward direction, respectively.
机译:首次报道了具有厚多晶硅作为被动结构层的双压电晶片薄膜钛酸锆钛酸铅(PZT)微致动器。已制造出一个简单的微悬臂致动器,该致动器由1000μm长和250μm宽,具有4μm厚的多晶硅结构构成,两侧是顶侧和底侧的压电有源层,以展示这种新颖的双压电晶片配置。促动器显示出只有2μm尖端变形的扁平轮廓,这表明结构中的应力分布平衡。它在两个方向上都可以交替驱动,从而证明了其对于微驱动机构的独特适用性,在微驱动机构中,需要被动结构层来增强系统的机械性能和可靠性。静态和动态测量显示了顶部和底部驱动的相似特性。该执行器的实测共振频率为6.3 kHz,向上和向下方向的位移电压灵敏度分别为17.9和25.6 nm / V。

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