Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation

摘要

The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Perot cavity in order to improve the external quantum efficiency and by decreasing the post-growth annealing temperature down-to 450 degrees C.