首页> 外国专利> GALLIUM ARSENIDE AND ALUMINUM GALLIUM ARSENIDE PHOTOCELL PROVIDED WITH OHMIC CONTACT GRID SEALED AGAINST ENVIRONMENT AND MANUFACTURE THEREOF

GALLIUM ARSENIDE AND ALUMINUM GALLIUM ARSENIDE PHOTOCELL PROVIDED WITH OHMIC CONTACT GRID SEALED AGAINST ENVIRONMENT AND MANUFACTURE THEREOF

机译:砷化镓和砷化铝镓光缆,并通过密封的抗静电接触格栅密封而成,并进行制造

摘要

PURPOSE: To provide a photosensitive cell such as a solar battery which has a passivasion layer of such material as AlGaAs which is sensitive with respect to the environment, protected by being sealed with respect to the environment. CONSTITUTION: This photoreceptive cell has a photoreceptive layer structure 44 including a P-N junction, a passivation layer 52 of the material such as AlGaA which is formed on the layer structure 44 and sensitive with respect to the environment, a cap layer 60 of a material which is formed covering part of the passivation layer 52, being not sensitive to the environment, a antireflection coating 54 of an electric insulating material which is formed on the passivation layer 52 and being not sensitive to the environment, and an ohmic contact 64 which is formed on the cap layer 60. Then the cap layer 60 extends through the antireflection coating 54 for sealing the passivasion layer 52, together with the antireflection coating 54.
机译:用途:提供一种光敏电池,例如太阳能电池,该光敏电池具有诸如AlGaAs之类的材料的钝化层,该钝化层对环境敏感,并通过相对于环境密封而受到保护。构成:该感光细胞具有包括PN结的感光层结构44,形成在层结构44上且对环境敏感的诸如AlGaA之类的材料的钝化层52,以及覆盖该材料的盖层60。形成覆盖钝化层52的一部分的,对环境不敏感的部分;形成在钝化层52上并且对环境不敏感的电绝缘材料的抗反射涂层54;以及形成的欧姆接触64然后,覆盖层60在覆盖层60上延伸。然后覆盖层60延伸穿过抗反射涂层54,以与抗反射涂层54一起密封钝化层52。

著录项

  • 公开/公告号JPH06244443A

    专利类型

  • 公开/公告日1994-09-02

    原文格式PDF

  • 申请/专利权人 SUPEKUTORORABU INC;

    申请/专利号JP19930273882

  • 发明设计人 KOU AI CHIYAN;BURUUSU TEII KABITSUCHI;

    申请日1993-11-01

  • 分类号H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-22 04:49:46

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