Double-interdigitated (TIL) bipolar transistor with heavily doped base wells

摘要

The authors report the development of two interdigitation level (TIL) bipolar transistors with heavily-doped base wells (BW), having the following advantages in comparison with identical conventional devices: (a) an approximately 18% and approximately 23% increase of voltages V/sub CEO(sus)/ and V/sub CBO/, respectively; (b) a reduction of the turn-on delay (t/sub d/) and rise times (t/sub r/) by a factor of approximately 20; and (c) a two-fold decrease of the fall time t/sub f/.