FET-controlled, double-interdigitated (TIL) bipolar power transistors

摘要

It is shown that FET-driven TILBW (two interdigitation levels with heavily doped base wells) transistors whose fabrication requires little change from the standard process flow of conventional n-p-n/sup -/-n transistors, exhibit a substantial improvement in voltage ratings and a drastic reduction of switching times. The recorded reduction of rise and fall times is all the more important, as they control the amount of commutation losses and hence the electrothermal reliability of devices. The refinement of presented concepts could further improve the performance of bipolar power switching transistors.