BIPOLAR TRANSISTOR, MULTI-FINGER BIPOLAR TRANSISTOR, EPITAXIAL SUBSTRATE FOR MANUFACTURING THE BIPOLAR TRANSISTOR, AND METHOD FOR MANUFACTURING THE BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a practical technology by which a ballast resistance used for the prevention of thermal runaway of a bipolar transistor is integrated on a substrate where the the bipolar transistor is formed.;SOLUTION: The bipolar transistor is provided with collector areas (3 and 5), a base area (6), emitter areas (8-10), an emitter electrode (13), and a resistance layer (12) that is provided between the emitter areas (8-10) and the emitter electrode (13) and is formed of a material with higher resistivity than the emitter electrode (13). The resistance layer (12) is formed of a compound material that a metal is dispersed in an insulator.;COPYRIGHT: (C)2004,JPO