Using GaN power amplifiers

摘要

Challenged with the demand to engineer higher-performing, more-efficient, and lower-cost systems in a shorter time-to-market, many RF and microwave system designers have focused on power amplifiers to get the highest return on R&D. Power amplifiers are a primary performance and cost factor in designing next-generation communication systems, and an advanced transistor can enable designers to meet their design goals. Improving the efficiency of a power amplifier can significantly enhance a design. In amplifying high peak- to average-power RF signals, as much as 90% of the power consumed is lost to heat. This heat results in high thermal management demands, increasing heat sink costs (capital expenses) as well as node size and air-conditioning costs (operating expenses). This double penalty for power-transistor efficiency translates into a double benefit when performance is improved. With the trend toward increasing data consumption among mobile terminal subscribers has come the need for increased channel and carrier bandwidth. As engineers are asked to provide wider-bandwidth power amplifiers up to 200 MHz, traditional technologies such as Si LD-MOS suffer significant efficiency penalties.