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机译:Gan-On-Si Hemts用Si CMOS兼容金属化的低功率移动SOC中的功率放大器
Singapore MIT Alliance Res & Technol Low Energy Elect Syst Singapore 138602 Singapore|Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore;
Xidian Univ Sch Microelect Xian 710071 Peoples R China;
Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;
Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;
Singapore MIT Alliance Res & Technol Low Energy Elect Syst Singapore 138602 Singapore;
Natl Univ Singapore Dept Elect & Comp Engn Singapore 117583 Singapore;
Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore;
MODFETs; HEMTs; Radio frequency; Silicon; Logic gates; Gallium nitride; Ohmic contacts; 5G; GaN-on-Si; high electron mobility transistor (HEMT); mobile system-on-chip (SoC); RF;
机译:CMOS兼容的GaN-On-Si HEMTS,截止频率为210 GHz和High Johnson的8.8至Thz v
机译:CMOS兼容的GaN-On-Si HEMTS,截止频率为210 GHz和High Johnson的8.8至Thz V的型号
机译:用LPCVD-SiN x sub>钝化和高温栅极凹槽制造的常关硅上GaN MIS-HEMT
机译:100nm T型栅极GaN-On-Si-Si Hemts,用于微波和MM波应用的CMOS兼容金属化
机译:用于非恒定包络信号的GaN-on-Si RF开关模式功率放大器。
机译:利用晶体管单元非对称功率组合的Ku波段50 W GaN HEMT功率放大器
机译:1GHz类F功率放大器中的DC压力和非直流胁迫GaN-on-Si HEMT的RF可靠性比较