Amplificadores de potencia para aplicaciones de microondas basados en dispositivos GaN (GaN-based Power amplifiers for microwave applications)

摘要

This paper presents a discussion about the design strategies of different kind of power amplifiers for RF/Microwave appli- cations, such as the tuned load power amplifier, class F, class F-1 and Doherty. Furthermore, it is shown the continuous wave characterization of the amplifiers above mentioned. A comparison between the obtained results, in terms of gain, efficiency and output power is presented.