Mosfets Improve Rds(on) By 50%

摘要

The IRFP4004PBF trench HEXFET power MOSFET features low R_DS(on) in a TO-24 7 package for synchronous rectification, active ORing and industrial applications including high power dc motors, dc/ac inverters and power tools. The MOSFETs offer a 50% improvement R_DS(on) over competing devices, has lower conduction losses, and eliminates the need for large packages. The family of n-channel MOSFETs provide a voltage range from 40 to 200 V. The devices are qualified for industrial-grade temperatures and moisture sensitivity level 1.