50-A SiC MOSFET family with 1700-V device boasts improved efficiency for high- power applications

摘要

Cree, Inc. announced a new family of 50-A Silicon Carbide (SiC) devices, including a 1700-V Z-FET SiC MOSFET. These new 50-A SiC devices, which also include a 1200-V Z-FET SiC MOSFET and three Z-Rec SiC Schottky diodes, are asserted to enable a new generation of power systems with record-setting energy efficiency and lower cost of ownership than with conventional technologies.