Method for fabricating the sub-50 nm-channel MOSFET

摘要

The present invention is to act as a micro-channel directed towards a method of manufacturing a device, in particular, the main difference in the gate and the work function of I channel by using a side gate formed below the side gate thin source / drain regions, it is an object to reduce the doping of the channel region to improve the mobility of the carrier and provide manufacturing bangbeopreul the micro-channel device that allows to minimize the change in threshold voltage caused by non-uniformity of the implanted impurities for threshold voltage adjustment .; According to the present invention, the method comprising the method of manufacturing a micro-channel device, define a p + polysilicon gate week using a micro-patterning technique after forming the gate oxide film on a p- substrate; Defining the n + polysilicon side gate through an insulating film after the icing on the results, the main gate and the insulating film; And then implanting p ⁰ halo ions on both sides of the gate side, there is provided a method of manufacturing a micro-channel device formed by including the step of implanting the source / drain n + ion.