SiC power devices improve efficiency, performance and cost

摘要

With the latest introductions of next-generation silicon carbide (SiC) MOSFETs and diodes, SiC power devices are ready to impact mainstream power applications in solar inverters, motor drives, UPS systems, traction, and wind and other industrial power converters. Benefits from their inherent switching efficiency, ruggedness, and high power density can reduce power consumption in power converters, increase the productivity of alternative energy systems, or significantly reduce the size, weight, and cost of systems by enabling higher switching speeds as compared to silicon-based solutions. SiC power devices are now being introduced by many vendors, and, most important, SiC switch technology is maturing, with several vendors introducing or sampling SiC MOSFETs. Cree's introduction of its second-generation MOSFET technology - including 50-A MOSFETs and Schottky diodes at 650,1,200, and 1,700 V - is a prime example.