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SDRAM Chip Set Boldly Goes Where No Man Has Gone Before

机译:SDRAM芯片组大胆走到没有人去的地方

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摘要

When it comes to achieving more memory in the same amount of space, we typically talk about process shrinks, die stacking, multichip packaging, and other techniques. But MetaRAM, a fabless company that recently "de-cloaked," has shot its new DIMM-based SDRAM torpedoes into the market and scored a direct hit. Web 2.0-type applications are causing bottlenecks in memory usage. Also, processing power is doubling every 18 months while DRAM capacity doubles only every 36 months. So far, the industry has countered this two-pronged attack with higher capacity and much more expensive DRAM-based dual-inline memory modules (DIMMs). Meanwhile, another unfortunate side effect of the increase in memory bandwidth is a reduction in the number of DIMMs per channel. As the bandwidth has increased from 533 to 1600 Mbits/s, for example, the number of DIMMs per channel has fallen from four to one. MetaRAM's MetaSDRAM chip set not only increases the capacity of a DRAM-based DIMM by a factor of four, it's also significantly cheaper and uses less power than technologies that use other methods to attain the same capacity on a DIMM (Fig. 1). The increased capacity is realized without any infrastructure or software changes (Fig. 2).
机译:当要在相同的空间中获得更多的内存时,我们通常会讨论工艺缩减,管芯堆叠,多芯片封装以及其他技术。但是,近来“隐形”的无晶圆厂公司MetaRAM已将其基于DIMM的新型SDRAM鱼雷推向市场,并受到了直接打击。 Web 2.0类型的应用程序正在导致内存使用方面的瓶颈。而且,处理能力每18个月翻一番,而DRAM容量每36个月翻一番。到目前为止,业界已经以更高的容量和更昂贵的基于DRAM的双列直插式内存模块(DIMM)来应对这种两方面的攻击。同时,内存带宽增加的另一个不幸的副作用是每通道DIMM数量的减少。例如,随着带宽从533 Mbit / s增加到1600 Mbit / s,每通道DIMM的数量从4个减少到1个。 MetaRAM的MetaSDRAM芯片组不仅使基于DRAM的DIMM的容量增加了四倍,而且与使用其他方法在DIMM上获得相同容量的技术相比,它的价格也更加便宜,并且功耗更低(图1)。无需任何基础架构或软件更改即可实现增加的容量(图2)。

著录项

  • 来源
    《Electronic Design》 |2008年第8期|p.23-24|共2页
  • 作者

  • 作者单位
  • 收录信息 美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 一般性问题;
  • 关键词

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