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Analysis of chip-to-chip power noise coupling on several SDRAM modules

机译:几个SDRAM模块上的芯片间功率噪声耦合分析

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This paper illustrates the noise characteristics under chip's operations according to types of packages and modules for DDR SDRAM. The impedance profiles and power noises are analyzed with SDRAM chips having TSOP package and FBGA package on TSOP-based DIMM and FBGA-based DIMM. In controversy with common concepts, the noise characteristics of FBGA package are more weak and sensitive than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.
机译:本文根据DDR SDRAM的封装和模块类型说明了芯片操作下的噪声特性。使用基于TSOP的DIMM和基于FBGA的DIMM上具有TSOP封装和FBGA封装的SDRAM芯片来分析阻抗曲线和功率噪声。与一般概念存在争议,FBGA封装的噪声特性比TSOP封装的噪声特性更弱,更敏感。此外,仿真结果表明,模块的去耦电容位置对于控制自噪声和传输噪声特性比封装的引线电感更为重要。因此,通过不仅仅考虑封装类型而且还考虑整个模块系统的配电系统的设计,可以实现满足噪声抑制和隔离的目标规格。

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