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Semiconductor memory chip e.g. double data rate SDRAM chip, assesses operating state of memory chip based on phase difference between reference clock signal and delayed operating clock signal

机译:半导体存储芯片双倍数据速率SDRAM芯片,根据参考时钟信号与延迟的工作时钟信号之间的相位差评估存储芯片的工作状态

摘要

A phase detector (4) ascertains the phase difference between a reference clock signal and the delayed operating clock signal. A digital counter (5) increments or reduces the count value by '1', when the operating clock signal leads or lags the reference signal, respectively. An evaluation circuit (7) assesses the operating state of the memory chip based on the counter reading. An Independent claim is also included for semiconductor memory chip operating detection method.
机译:相位检测器(4)确定参考时钟信号和延迟的工作时钟信号之间的相位差。当工作时钟信号超前或滞后于参考信号时,数字计数器(5)会将计数值增加或减少“ 1”。评估电路(7)根据计数器读数评估存储芯片的工作状态。半导体存储器芯片操作检测方法也包括独立权利要求。

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