SINGLE-ELECTRON TRAPPING IN SUB-μm SIZED MOSFETs

摘要

In sub-μm metal-oxide-semiconductor field-effect transistors (MOSFETs), the trapping and emission of single inversion carriers at the Si-SiO_2 interface is visible as a discrete fluctuation of the channel conductance known as a random telegraph signal (RTS). The RTS is the major contribution to the total noise present in the device during operation. Electron traps in sub-μm MOSFETs are individually observed due to their low total number in the small device area and due to their isolation from each other by screening caused by the gate electrode. Capture and emission in such small structures are subject to Coulomb blocking and enhancement effects of several hundred meV at room temperature. Single interface traps may be used as randomly located atomic probes in the MOS channel.