Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis

摘要

A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel. The performance of the proposed device is assessed using 2-D simulations. We establish the prospect of realizing low-cost thin-film recrystallized polycrystalline tunnel FETs with: 1) low OFF-state current and low sub-threshold swing (SS) and 2) an ON-state current similar to that of a comparable single grain boundary poly-silicon thin film transistor (TFT). Our results indicate that the proposed single grain boundary dopingless PNPN TFET could be an ideal substitute for the conventional TFTs making it appropriate for low power display applications as well as the driver circuits.