New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors

摘要

A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (RSP), a new structure called REC-SJ LDMOS, with two symmetrical rectangular p-pillars, was designed and simulated. The REC-SJ LDMOS presents not only a higher VBD than the conventional super-junction (Conv-SJ) LDMOS due to the more uniform electric field distribution in the drift region, but also a better power figure of merit on account of the much lower RSP than Conv-SJ. Accordingly, the new poly-Si REC-SJ LDMOS provides a way to break through the tradeoff between the VBD and the RSP.