High Mobility In_0.53Ga_0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

摘要

We have validated that the electrical performances of the In_0.53Ga_0.47As MOSFETs such as sub-threshold slope (SS) and electron mobility were dependent on interfacial reactions in the metal/highk/InGaAs gate stacks which could be controlled remotely by choice of the metal electrodes. We demonstrated In_0.53Ga_0.47As MOSFETs with high mobility (peak mobility ~1300 cm2/Vs) and superior SS performance (SS 76.4 mV/dec) at the scaled CET region owing to the remote reduction of the native III-V oxide by the TiN electrodes.