机译:表面沟道Al_2O_3 / In_(0.53)Ga_(0.47)As MOSFET中电子迁移率的研究
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
General Technical Services, US Army Research Laboratory, RDRL-SER-E, 2800 Powder Mill Road, Adelphi, MD 20783, USA;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Cork, Ireland;
InGaAs; Mobility; MOSFET; High-k; Interface traps; Pulsed I_d - V_g;
机译:植入物自由复合通道的高性能和可靠性分析(0.53)GA_(0.47)AS / INAS / IN_(0.53)GA_(0.47)作为Δ掺杂MOSFET
机译:具有ZrO_2栅极电介质的表面沟道In_(0.53)Ga_(0.47)As n-MOSFET的界面态密度,低频噪声和电子迁移率
机译:环境温度和退火温度对原子层沉积Al_2O_3 / In_(0.53)Ga_(0.47)作为金属氧化物半导体电容器和MOSFET的电特性的影响
机译:金属/Al_2O_3/In_(0.53)Ga_(0.47)As/InP MOSCAP特性可以转换为金属/Al_2O_3/In_(0.53)Ga_(0.47)As/InP MOSFET特性吗?
机译:4H-SIC沟槽MOSFET:实用的表面沟道迁移率提取
机译:栅极长度变化对栅极优先自对准In0.53Ga0.47As MOSFET性能的影响
机译:表面和掩埋沟道平带中的电子迁移率In 0.53 sub> Ga 0.47 sub>作为具有aLD al 2 sub> O 3 sub>的mOsFET栅极电介质。