Avalanche multiplication in a compact bipolar transistor model for circuit simulation

摘要

A simple weak avalanche model valid in a wide range of voltages and currents, is presented. The proposed model is derived by using the base-collector depletion capacitance for predicting the avalanche current. The model needs only one additional transistor parameter; the extraction method and temperature dependence of this parameter are discussed. The decrease in avalanche current for high collector current densities may originate from internal device heating, a voltage drop in the epilayer, or mobile carriers in the depleted part. From experimental results it is concluded that, below a critical hot-carrier current, the decrease in avalanche current due to mobile carriers is negligible.