Characteristics of p-i junction amorphous silicon stripe-type photodiode array and its application to contact image sensor

摘要

Various sandwich structures of photodiode arrays using hydrogenated amorphous silicon films fabricated under similar process conditions were compared. As a result of this comparison, the p-i junction amorphous silicon stripe-type photodiode array was studied. This photodiode array has the same excellent sensor performance characteristics for contact image sensors as the p-i-n junction type, and it has a similar process. A contact image sensor using this photodiode array with eight elements/mm resolution and A4 size is discussed. This compact, high performance sensors was applied to GIII facsimiles.