Comparison between analytical models and finite-difference simulations in transmission-line tap resistors and L-type cross-Kelvin resistors

摘要

Approximate analytical models of the transmission-line tap resistor and the cross-Kelvin resistor are compared with computer-simulated pseudo-three-dimensional resistor network models. The analytical formulas are in good agreement with the simulations over a useful range of parameters and are readily applied to the extraction of the contact resistivity and the sheet resistances of the semiconducting layer under and outside of the contacts. The extraction procedure, which is easily implemented on a personal computer, is carried out for the case of alloyed AuGeNi-GaAs contacts, illustrating the importance of distinguishing between layer sheet resistance under and outside of the contacts and of considering two-dimensional current flow in the semiconducting layer.