MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200

摘要

Lattice-matched Ga/sub 0.51/In/sub 0.49/P-GaAs heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy that exhibit small-signal current gains as high as 200 are discussed. This result demonstrates the feasibility of using (InGa)P as an alternative to (AlGa)As in GaAs-based devices.