Three categories of circuits were explored to induce fast recovery, after lock-on by temporarily reducing the field across the switch. Measurements of recovery times from 35 to 80 ns, multiple monopolar and bipolar bursts at 5-40 MHz, and hold-off fields ranging from 5-44 kV/cm (corresponding to 15-66 kV across individual switches) are presented. A comparison is made of the different circuits used to induce recovery from lock-on, and the various factors that influence the recovery are discussed.
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