Improved drift in two-phase, long-channel, shallow buried-channel CCDs with longitudinally nonuniform storage-gate implants

摘要

Two-phase buried-channel charge-coupled devices (CCDs) with a gradient in the storage wells, generated by a nonuniform channel doping parallel to the surface, were studied at room temperature and at 77 K. The built-in drift fields improve the charge transfer efficiency by more than an order of magnitude, consistently with two-dimensional simulations.