Simulating the competing effects of P- and N-MOSFET hot-carrier aging in CMOS circuits

摘要

A PMOSFET hot-carrier degradation model has been incorporated into the reliability simulator BERT-CAS, enabling prediction of dynamic circuit-level degradation in which both PMOSFET and NMOS-FET degradation play a major role. Comparisons with measured data from CMOS ring oscillator frequency shifts show that full aging simulation by CAS can correctly predict the initial frequency increase due to the PMOSFET current enhancement, and the eventual frequency decrease due to the NMOSFET current degradation.