An analytical model for determining carrier transport mechanism of polysilicon emitter bipolar transistors

摘要

An analytical model is proposed by including carrier transport mechanisms which previous unified analytical models do not consider: minority carrier combination at both sides of polysilicon-silicon interfacial oxides and thermionic emission over segregation potential barriers for determining the precise carrier transport mechanisms which govern current gain and specific emitter interfacial resistivity. This approach allows us to gain an insight into carrier transport mechanisms and provides a distinct image for polysilicon emitter bipolar devices. With the consideration of the interfacial capture cross section as a function of temperature, the dependence of current gain for devices given an HF etch prior to polysilicon deposition on temperature is first explained successfully. For improving device performance, some directive suggestions are presented.