A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs]

摘要

Gate induced drain leakage (GIDL) is frequently described by band-to-band tunneling. This mechanism is insensitive to temperature and occurs only under strong electric fields. Under the condition of small electric fields, however, GIDL exhibits a strong dependence on temperature, which is due to trap-assisted generation of electron hole pairs. This generation mechanism is based on the Shockley-Read-Hall (SRH) equation involving field dependent emission probabilities due to Fowler-Nordheim (FN) and Poole-Frenkel effect. The proposed model of an acceptor-like interface trap is able to reproduce the experimental results. Temperature and voltage dependencies for a p-MOSFET are correctly calculated for one single fitting parameter, i.e., the interface trap density corresponding to N/sub t/=1/spl times/10/sup 14/(1/eV m/sup 2/).