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STRUCTURE AND FABRICATION METHOD OF TUNNEL FIELD EFFECT TRANSISTOR WITH INCREASED DRIVE CURRENT AND REDUCED GATE INDUCED DRAIN LEAKAGE (GIDL)
STRUCTURE AND FABRICATION METHOD OF TUNNEL FIELD EFFECT TRANSISTOR WITH INCREASED DRIVE CURRENT AND REDUCED GATE INDUCED DRAIN LEAKAGE (GIDL)
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机译:增大驱动电流和减少闸门引起的漏水(GIDL)的隧道场效应晶体管的结构和制造方法
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摘要
Gate induced drain leakage in a tunnel field effect transistor is reduced while drive current is increased by orienting adjacent semiconductor bodies, based on their respective crystal orientations or axes, to optimize band-to-band tunneling at junctions. Maximizing band-to-band tunneling at a source-channel junction increases drive current, while minimizing band-to-band tunneling at a channel-drain junction decreases GIDL. GIDL can be reduced by an order of magnitude in an embodiment. Power consumption for a given frequency can also be reduced by an order of magnitude.
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