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Reply to comments on 'Modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels'

机译:关于“在任意注入水平下双极型设备中小信号少数载流子传输的建模”的评论答复

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For comment see ibid., vol.49, no.10, p.1839-41 (2002). The arguments presented in the above comment are refuted. It is shown that the author's earlier analysis (1998) presents a generalization of previous high-frequency models by means of the rigorous method of matching the Taylor series. This method is consistent with previous formulations, and can be applied to any model, regardless of the fact that a model cannot be derived as a truncated version of the open form solutions. A detailed comparison of recent high-frequency models is also presented.
机译:有关评论,请参见同上,第49卷,第10期,第1839-41页(2002)。驳斥了以上评论中提出的论点。结果表明,作者较早的分析(1998年)通过严格的泰勒级数匹配方法对以前的高频模型进行了概括。此方法与以前的公式一致,并且可以应用于任何模型,而不管不能将模型作为开放式解决方案的截断版本导出的事实。还介绍了最新的高频模型的详细比较。

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