机译:AlGaN和AlGaN-GaN MOSHFET上的光CVD SiO / sub 2 /层
Dept. of Electron. Eng., Southern Taiwan Univ. of Technol., Tainan, Taiwan;
aluminium compounds; gallium compounds; III-V semiconductors; MOSFET; silicon compounds; CVD coatings; interface states; leakage currents; Poole-Frenkel effect; wide band gap semiconductors; AlGaN-GaN MOSHFET; AlGaN substrate; SiO/sub 2/ layer; D/sub;
机译:AlGaN和AlGaN / GaN MOS-HFET上的室温光CVD SiO_2层
机译:具有光CVD栅极氧化物的高跨导AlGaN / GaN MOSHFET
机译:稳定的20 W / mm AlGaN-GaN MOSHFET
机译:低接口状态密度AlGaN / GaN Moshfet采用光化学气相沉积SiO_2层
机译:Algan / GaN Moshfet使用ALD电介质:性能和可靠性研究
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:单层石墨烯与alGaN-GaN异质结构传输特性的对比研究