Investigations of High-Performance GaAs Solar Cells Grown on Ge-Si{sub}(1-x)Ge{sub}x-Si Substrates

摘要

High-performance p+ GaAs solar cells were grown and processed on compositionally graded Ge-Si{sub}(1-x)-Ge{sub}x-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm{sup}2 solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AMO) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm{sup}2 did not degrade the measured performance characteristics for cells processed /m identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of ho-moepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integrta-tion of high performance III-V photovoltaics devices with large area Si wafers.