“Ground-Referenced” Model for Three-Terminal Symmetric Double-Gate MOSFETs With Source/Drain Symmetry

摘要

This brief presents for the first time a “ground-referenced” model to satisfy the Gummel symmetry test in three-terminal MOSFETs without body contact. Unlike four-terminal bulk MOSFETs, in which the bulk Fermi potential is set by the body voltage, a paradigm change is needed to model the respective electron and hole imrefs referenced to the ground rather than to model the imref-split referenced to the source. Together with the model consistency requirement for any reference voltages, the proposed formulations, as illustrated with undoped symmetric double-gate MOSFETs, provide a guide for formulating compact models with source/drain (S/D) symmetry, which can also be easily extended to model unintentional or intentional S/D asymmetry.