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Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

机译:金和五氧化二钒改性的铟锡氧化物作为有机发光器件的高效阳极

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摘要

Au/Vanadium pentoxide $(hbox{V}_{2}hbox{O}_{5})$ films on indium tin oxide (ITO) as composite anodes for hole injection in organic light-emitting devices (OLEDs) have been investigated. The device with $hbox{ITO/Au}(hbox{6} hbox{nm})/hbox{V}_{2} hbox{O}_{5}(hbox{6} hbox{nm})$ anode shows improved current density–voltage characteristics as compared with the device with ITO/Au as anode. Hole injection is significantly reduced when Au was added on ITO as an anode. However, while a thin $hbox{V}_{2}hbox{O}_{5}$ film is deposited on a Au anode, the barrier height is substantially reduced. The hole injection is facilitated, and the driving voltage of the device decreased by 10 V. In addition, the maximum current efficiency for the $hbox{ITO/Au}/hbox{V}_{2}hbox{O}_{5}$ OLED is $sim$3.5 cd/A, which is higher than that of the ITO/Au anode device ($sim$1.1 cd/A) and $ hbox{ITO}/hbox{V}_{2}hbox{O}_{5}$ OLED of $sim$ 2.8 cd/A.
机译:已经研究了氧化铟锡(ITO)上的Au /五氧化二钒$(hbox {V} _ {2} hbox {O} _ {5})$薄膜作为有机发光器件(OLED)中空穴注入的复合阳极的研究。带有$ hbox {ITO / Au}(hbox {6} hbox {nm})/ hbox {V} _ {2} hbox {O} _ {5}(hbox {6} hbox {nm})$阳极的设备显示与以ITO / Au为阳极的器件相比,电流密度-电压特性得到了改善。当在ITO上添加Au作为阳极时,空穴注入显着减少。然而,尽管在Au阳极上沉积了薄的$ hbox {V} _ {2} hbox {O} _ {5} $膜,但是势垒高度却大大降低了。有利于空穴注入,并且器件的驱动电压降低了10V。此外,$ hbox {ITO / Au} / hbox {V} _ {2} hbox {O} _ {5的最大电流效率} $ OLED的价格为$ sim $ 3.5 cd / A,高于ITO / Au阳极设备的价格($ sim $ 1.1 cd / A)和$ hbox {ITO} / hbox {V} _ {2} hbox {O} _ {5} $ OLED,$ sim $ 2.8 cd / A。

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