Monte Carlo Simulation of Ion Implantation in Crystalline SiC With Arbitrary Polytypes

摘要

A Monte Carlo model for ion implantation in crystalline SiC is developed, which can be applied to arbitrary polytypes, including but not limited to 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, and 15R-SiC. It is shown that with optimized parameters, a semiempirical el