Miniature RF Test Structure for On-Wafer Device Testing and In-Line Process Monitoring

摘要

In this brief, a miniature test structure for RF device characterization and process monitoring has been proposed. This new layout design can minimize the voltage drop across interconnects and can prevent capacitive coupling to devices. It consumes only 36% and 40% of the chip area of the conventional on-wafer and in-line test structures, respectively. The RF characteristics of the proposed test structure are shown to be in excellent agreement with those of the conventional ones.