A Charge-Based OTFT Model for Circuit Simulation

摘要

In this paper, a mathematical model for the dc/dynamic current of organic thin-film transistors is proposed. The model is based on the variable-range hopping transport theory, i.e., thermally activated tunneling of carriers between localized states, and the mathematical expression of the current is formulated by means of the channel accumulation charge. It accurately accounts for below-threshold, linear, and saturation operating conditions via a single formulation, and does not require the explicit definition of the threshold and saturation voltages. Basing on the charge control approach, the dc model is straightforwardly generalized to dynamic conditions; the resulting mathematical expressions are simple and suitable for CAD applications.