A Statistical Model of Erratic Behaviors in Flash Memory Arrays

摘要

We present a statistical model of erratic behaviors in Flash memory arrays based on a Markov chain model. The model parameters are experimentally evaluated through short-program/erase-cycling characterizations. The model is suitable for Monte Carlo simulations of Flash memory arrays through which the presence of tail bits in the threshold voltage distribution can be correctly predicted. Finally, an application to nand architectures is discussed in relation to overprogramming issue.