High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

摘要

We demonstrated flexible amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) on fully transparent and high-temperature polyimide-based nanocomposite substrates. The flexible nanocomposite substrates were coated on the carrier glass substrates and were debonded after the TFT microfabrication. The adoption of the Ti/IZO stacked electrodes as source/drain/gain electrodes significantly improved the etching compatibility with other material layers, enabling successful implementation of flexible a-IGZO TFTs onto the transparent nanocomposite substrates by conventional lithographic and etching processes. The flexible a-IGZO TFTs exhibited decent mobility and mechanical bending capability. Field-effect mobility of up to 15.9 $ hbox{cm}^{2}/hbox{V}cdot hbox{s}$, a subthreshold swing of 0.4 V/dec, a threshold voltage of 0.8 V, and an on/off ratio of $>hbox{10}^{8}$ were extracted from the TFT characteristics. The devices could be bent down to a radius of curvature of 3 mm and yet remained normally functional. Such successful demonstration of flexible oxide TFTs on transparent flexible substrates using fully lithographic and etching processes that are compatible with existing TFT fabrication technologies shall broaden their uses in flexible displays and electronics.