Quantum Confinement and Volume Inversion in ${rm MOS}^{3}$ Model for Short-Channel Tri-Gate MOSFETs

摘要

An efficient way to include the effects of quantum confinement and volume inversion in the ${rm MOS}^{3}$ compact model for lightly doped triple-gate silicon-on-insulator MOSFETs is presented. The model is verified with numerical results based on the nonequilibrium Green's function formalism. The numerically efficient modeling approach shows a good agreement down to a channel length of 10 nm and silicon fin thickness of 3 nm.