Investigation on the Direct Method for the Extraction of Semiconductor Material Parameters Using the EBIC Line Scan: Planar-Collector Configuration

摘要

In this paper, a study on the electron beam induced current (EBIC) technique for the extraction of semicon-ductor parameters in the planar-collector configuration is presented. The EBIC line scan data are computed using an expression published in the Journal of Engineering Mathematics in 1984. and their correctness is verified using a 2-D device simulator. The EBIC data are then used to investigate the direct method to determine the diffusion length and surface recombination velocity proposed by another study publised in the IEEE Transaction on Electron Devices in 1995. The impacts of the starting location and the width of beam scanning range and depth of the generation volume on the linearization coefficient and the accuracy of the extracted diffusion length are presented. A new set of fitting parameters to extract the surface recombination velocity at the beam entry surface from the value is redefined, hence, improving the accuracy of the extraction. The conditions for the accurate extraction of diffusion length and surface recombination velocity are discussed.