Investigation of Polysilazane-Based src='/images/tex/16762.gif' alt='hbox {SiO}_{2}'> Gate Insulator for Oxide Semiconductor Thin-Film Transistors

摘要

To realize all-solution-processed oxide semiconductor thin-film transistors (TFTs), for use in display applications in particular, a polysilazane-based $hbox{SiO}_{2}$ gate insulator is investigated. The gate leakage current was reduced to $hbox{1} times hbox{10}^{-8} hbox{A/cm}^{2}$ at 1 MV/cm. TFTs were successfully fabricated using a ZrInZnO precursor solution for the active layer and a polysilazane-based solution for the gate insulator. A smooth interface without defects was confirmed in the $hbox{ZrInZnO/SiO}_{2}$ system. The resulting TFTs exhibited a field-effect mobility of 19–29 $hbox{cm}^{2}cdot hbox{V}^{-1}cdot hbox{s}^{-1}$ with a low leakage current of less than $hbox{9} times hbox{10}^{-11} hbox{A}$. These results are very promising for the development of all-solution-processed oxide semiconductor TFTs, which have the potential to replace TFTs fabricated by vacuum deposition methods.