Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation

摘要

This paper presents a compact model of SiC insulated-gate bipolar transistors (IGBTs) for power electronic circuit simulation. Here, we focus on the modeling of important specific features in the turn-off characteristics of the 4H-SiC IGBT, which are investigated with a 2-D device simulator, at supply voltages higher than 5 kV. These features are found to originate from the punch-through effect of the SiC IGBT. Thus, they are modeled based on the carrier distribution change caused by punch through and implemented into the silicon IGBT model named “HiSIM-IGBT” to obtain a practically useful SiC-IGBT model. The developed compact SiC-IGBT model for circuit simulation is verified with the 2-D device simulation data.